When H Bridge has inductive loads, as a result of the dv/dt noise coming up with the change of load current direction, the output current of power Metal Oxide Semiconductor (MOS) Field Effect Transistor (MOSFET) has a sharp peak, which worsens the Electro Magnetic Interference (EMI) characteristics of the circuit. In order to further reduce the di/dt noise and current peak during power MOSFETs start-up, a full-bridge drive circuit with fast start-up and low reverse recovery current peak is proposed after expounding the characteristics of the power MOSFET Miller platrau and characteristics of the H-bridge switch. Finally, based on the 0.18 μm Bipolar-CMOS-DMOS process, the designed circuit has a fast start-up time of 300 ns and the reverse recovery current peak value of 452 mA with the condition of a power supply range of 10~40 V and a maximum operating current of 2.5 A.